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Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In+/In3+) inorganic halide perovskite with the composition of Cs2In(I)In(III)Cl6 in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Å, c = 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications. 

Abstract We report a metal–organic framework (MOF) with a rare two‐dimensional (2D) secondary building unit (SBU). The SBU comprises mixed‐valent Fe²⁺and Fe³⁺metal ions bridged by oxygen atoms pertaining to the polytopic ligand 3,3′,4,4′,5,5′‐hexahydroxybiphenyl, which also define the iron‐oxide 2D layers. Overall, the anionic framework exhibits rare topology and evidences strong electronic communication between the mixed‐valence iron sites. These results highlight the importance of dimensionality control of MOF SBUs for discovering new topologies in reticular chemistry, and especially for improving electronic communication within the MOF skeleton.